Dual N-Channel and P-Channel MOSFET for power applications. Features 30V drain-source breakdown voltage and 6.5A continuous drain current. Offers low on-resistance of 29mΩ at a nominal gate-source voltage of 1V. Encased in a compact SOIC package, this surface-mount component operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 2W. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
International Rectifier AUIRF7319Q technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
46mR
Drain to Source Voltage (Vdss)
30V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
650pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
2
Package Quantity
95
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
29mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier AUIRF7319Q Datasheet
Download the complete datasheet for International Rectifier AUIRF7319Q to view detailed technical specifications.
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