International Rectifier
AUIRF7319QTR
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
International Rectifier AUIRF7319QTR technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 46mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 650pF |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 29mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7319QTR Datasheet
Download the complete datasheet for International Rectifier AUIRF7319QTR to view detailed technical specifications.
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