International Rectifier
AUIRF7343QTR
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
PackageSOIC
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier AUIRF7343QTR technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 55V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 740pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7343QTR Datasheet
Download the complete datasheet for International Rectifier AUIRF7343QTR to view detailed technical specifications.
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