P-channel power MOSFET with -30V drain-source breakdown voltage and -10A continuous drain current. Features low 35mΩ drain-to-source resistance and 2.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a surface-mount SOIC (SOP-8) with dimensions of 5mm length, 4mm width, and 1.5mm height. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
International Rectifier AUIRF7416Q technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -10A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.7nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 18ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7416Q Datasheet
Download the complete datasheet for International Rectifier AUIRF7416Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.