AUIRF7478Q

N-Channel MOSFET, 60V, 7A, 30mR, SOIC, Surface Mount

N-Channel MOSFET, a surface-mount electronic component in an SOIC package, offers a continuous drain current of 7A and a drain-to-source breakdown voltage of 60V. Featuring a low drain-to-source resistance of 30mΩ, this transistor boasts fast switching speeds with a fall time of 13ns and turn-on delay of 7.7ns. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 2.5W and an input capacitance of 1.74nF.

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

Power2.5W

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Technical Specifications

International Rectifier AUIRF7478Q technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	7A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	30mR
Drain to Source Voltage (Vdss)	60V
Fall Time	13ns
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	1.74nF
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Number of Elements	1
Package Quantity	95
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Rds On Max	26mR
RoHS Compliant	Yes
Series	HEXFET®
Turn-Off Delay Time	44ns
Turn-On Delay Time	7.7ns
Width	4mm