N-channel MOSFET with 60V drain-source breakdown voltage and 77A continuous drain current. Features low 36mΩ drain-to-source resistance and fast switching times with a 4ns turn-on delay. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 30W. Surface mountable in a compact DirectFET package, this component is RoHS compliant.
International Rectifier AUIRF7640S2TR1 technical specifications.
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 6.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.74mm |
| Input Capacitance | 450pF |
| Length | 4.85mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 6.3ns |
| Turn-On Delay Time | 4ns |
| Width | 3.95mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRF7640S2TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.