N-channel MOSFET featuring 60V drain-source breakdown voltage and 14A continuous drain current. Offers low 7mΩ drain-source on-resistance and 2.5W/63W power dissipation. Surface mount component with a compact 6.35mm x 5.05mm x 0.74mm footprint. Operates across a wide temperature range of -55°C to 175°C.
International Rectifier AUIRF7648M2TR1 technical specifications.
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 7MR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.74mm |
| Input Capacitance | 2.17nF |
| Length | 6.35mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 12ns |
| Width | 5.05mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRF7648M2TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.