N-channel MOSFET for surface mount applications, featuring a 100V drain-source breakdown voltage and a maximum continuous drain current of 4.1A. Offers a low drain-source on-resistance of 62mR at a nominal gate-source voltage of 4V. Operates across a wide temperature range from -55°C to 175°C, with fast switching characteristics including a 3.6ns fall time and 3.8ns turn-on delay. Packaged in tape and reel, this RoHS compliant component is designed for efficient power management.
MountingSurface Mount
PolarityN-CHANNEL
Power30W
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Technical Specifications
International Rectifier AUIRF7665S2TR1 technical specifications.
General
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 62mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 62MR |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.74mm |
| Input Capacitance | 515pF |
| Lead Free | Lead Free |
| Length | 4.85mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 62mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 7.1ns |
| Turn-On Delay Time | 3.8ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7665S2TR1 Datasheet
Download the complete datasheet for International Rectifier AUIRF7665S2TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.