International Rectifier
AUIRF7675M2TR
Power Field-Effect Transistor, 4.4A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
MountingSurface Mount
Power2.7W
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Technical Specifications
International Rectifier AUIRF7675M2TR technical specifications.
General
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 56mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.36nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.7W |
| Radiation Hardening | No |
| Rds On Max | 56mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7675M2TR Datasheet
Download the complete datasheet for International Rectifier AUIRF7675M2TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.