N-channel MOSFET featuring 150V drain-source breakdown voltage and 4.4A continuous drain current. Offers low 56mΩ drain-source resistance at a nominal 4V gate-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 45W. This surface-mount component boasts fast switching characteristics with a 10ns turn-on delay and 7.5ns fall time. Packaged in tape and reel, it is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power45W
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Technical Specifications
International Rectifier AUIRF7675M2TR1 technical specifications.
General
Continuous Drain Current (ID)
4.4A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
56mR
Drain to Source Voltage (Vdss)
150V
Fall Time
7.5ns
Gate to Source Voltage (Vgs)
20V
Height
0.74mm
Input Capacitance
1.36nF
Length
6.35mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Nominal Vgs
4V
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
56mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
14ns
Turn-On Delay Time
10ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier AUIRF7675M2TR1 Datasheet
Download the complete datasheet for International Rectifier AUIRF7675M2TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.