International Rectifier
AUIRF7734M2TR
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier AUIRF7734M2TR technical specifications.
General
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance | 2.545nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 4.9mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 42ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7734M2TR Datasheet
Download the complete datasheet for International Rectifier AUIRF7734M2TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.