N-channel MOSFET with 40V drain-source breakdown voltage and 31A continuous drain current. Features low 1.9mR drain-source resistance and 3.3W power dissipation. Operates across a -55°C to 175°C temperature range. Surface mount design with a compact 9.15mm x 7.1mm x 0.74mm footprint. Ideal for high-current switching applications.
MountingSurface Mount
PolarityN-CHANNEL
Power3.3W
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Technical Specifications
International Rectifier AUIRF7737L2TR1 technical specifications.
General
Continuous Drain Current (ID)
31A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
1.9mR
Drain to Source Voltage (Vdss)
40V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
0.74mm
Input Capacitance
5.469nF
Length
9.15mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.3W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.3W
Radiation Hardening
No
Rds On Max
1.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
22ns
Turn-On Delay Time
12ns
Width
7.1mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier AUIRF7737L2TR1 Datasheet
Download the complete datasheet for International Rectifier AUIRF7737L2TR1 to view detailed technical specifications.
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