N-channel MOSFET featuring 40V drain-source breakdown voltage and 35A continuous drain current. Offers a low 1.6mΩ drain-to-source resistance. Designed for surface mounting with a compact 9.15mm x 7.1mm x 0.74mm footprint. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 94W. RoHS compliant and supplied in tape and reel packaging.
MountingSurface Mount
PolarityN-CHANNEL
Power94W
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Technical Specifications
International Rectifier AUIRF7738L2TR1 technical specifications.
General
Continuous Drain Current (ID)
35A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
1.6mR
Drain to Source Voltage (Vdss)
40V
Fall Time
38ns
Gate to Source Voltage (Vgs)
20V
Height
0.74mm
Input Capacitance
7.471nF
Lead Free
Lead Free
Length
9.15mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.3W
Mount
Surface Mount
Nominal Vgs
3V
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
94W
Radiation Hardening
No
Rds On Max
1.6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
39ns
Turn-On Delay Time
21ns
Width
7.1mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier AUIRF7738L2TR1 Datasheet
Download the complete datasheet for International Rectifier AUIRF7738L2TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.