N-channel MOSFET transistor featuring 40V drain-source breakdown voltage and 46A continuous drain current. Offers a low 1mΩ drain-source on-resistance at a nominal gate-source voltage of 2.8V. Operates with a maximum power dissipation of 125W and a maximum junction temperature of 175°C. This surface-mount component is packaged in tape and reel, with RoHS compliance.
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
International Rectifier AUIRF7739L2TR1 technical specifications.
General
Continuous Drain Current (ID)
46A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
1mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
1MR
Fall Time
42ns
Gate to Source Voltage (Vgs)
20V
Height
0.74mm
Input Capacitance
11.88nF
Lead Free
Lead Free
Length
9.15mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Nominal Vgs
2.8V
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
1mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2.8V
Turn-Off Delay Time
56ns
Turn-On Delay Time
21ns
Width
7.1mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier AUIRF7739L2TR1 Datasheet
Download the complete datasheet for International Rectifier AUIRF7739L2TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.