International Rectifier
AUIRF7759L2TR
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MountingSurface Mount
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Technical Specifications
International Rectifier AUIRF7759L2TR technical specifications.
General
| Continuous Drain Current (ID) | 375A |
| Drain to Source Voltage (Vdss) | 75V |
| Input Capacitance | 12.222nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 3.3W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Rds On Max | 2.3mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7759L2TR Datasheet
Download the complete datasheet for International Rectifier AUIRF7759L2TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.