N-Channel Power MOSFET, 30V Drain-Source Voltage, 13A Continuous Drain Current, and 11mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a surface-mount SOIC package with a maximum power dissipation of 2.5W. Operating temperature range spans from -55°C to 150°C, with typical turn-on and fall times of 16ns. RoHS compliant for modern electronic designs.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier AUIRF7805Q technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7805Q Datasheet
Download the complete datasheet for International Rectifier AUIRF7805Q to view detailed technical specifications.
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