Surface mount N-channel and P-channel MOSFET with 30V drain-source breakdown voltage and 3.5A continuous drain current. Features 100mΩ maximum drain-source resistance at a nominal 1V gate-source voltage. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Housed in a compact SOIC package measuring 5mm x 4mm x 1.5mm.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
International Rectifier AUIRF9952Q technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 190pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | HEXFET® |
| Threshold Voltage | 1V |
| Width | 4mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier AUIRF9952Q Datasheet
Download the complete datasheet for International Rectifier AUIRF9952Q to view detailed technical specifications.
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