N-channel power MOSFET featuring 75V drain-source breakdown voltage and 4.5mΩ Rds On resistance. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 170A and a maximum power dissipation of 300W. Designed for through-hole mounting in a TO-220AB package, it operates across a temperature range of -55°C to 175°C. Key switching characteristics include a turn-on delay of 29ns and a fall time of 74ns. This RoHS compliant component is suitable for demanding power applications.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
International Rectifier AUIRFB3207 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 74ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 7.6nF |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 29ns |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFB3207 Datasheet
Download the complete datasheet for International Rectifier AUIRFB3207 to view detailed technical specifications.
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