N-Channel Power MOSFET, 100V Drain-Source Voltage, 88A Continuous Drain Current, and 10mΩ Rds On Max. Features 200W Max Power Dissipation, 5.15nF Input Capacitance, and 24ns Turn-On Delay. Operates from -55°C to 175°C, housed in a TO-220AB through-hole package. RoHS compliant.
PackageTO-220AB
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier AUIRFB4410 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 88A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 5.15nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 24ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFB4410 Datasheet
Download the complete datasheet for International Rectifier AUIRFB4410 to view detailed technical specifications.
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