International Rectifier
AUIRFIZ34N
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PackageTO-220-3
MountingThrough Hole
Power37W
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Technical Specifications
International Rectifier AUIRFIZ34N technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 37W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFIZ34N Datasheet
Download the complete datasheet for International Rectifier AUIRFIZ34N to view detailed technical specifications.
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