N-channel, silicon, metal-oxide semiconductor field-effect transistor (MOSFET) designed for surface mounting in a TO-261AA (SOT-223) package. Features a continuous drain current of 2.8A and a drain-to-source breakdown voltage of 55V. Offers a low drain-to-source on-resistance of 75mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Includes fast switching characteristics with turn-on delay time of 8.1ns and fall time of 17.7ns.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
International Rectifier AUIRFL024N technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
2.8A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
55V
Fall Time
17.7ns
Gate to Source Voltage (Vgs)
20V
Height
1.8mm
Input Capacitance
400pF
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
80
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
75mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
22.2ns
Turn-On Delay Time
8.1ns
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier AUIRFL024N Datasheet
Download the complete datasheet for International Rectifier AUIRFL024N to view detailed technical specifications.
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