International Rectifier
AUIRFL024NTR
Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
International Rectifier AUIRFL024NTR technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 17.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 400pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 22.2ns |
| Turn-On Delay Time | 8.1ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFL024NTR Datasheet
Download the complete datasheet for International Rectifier AUIRFL024NTR to view detailed technical specifications.
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