International Rectifier
AUIRFP064N
Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3
PackageTO-247AC
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier AUIRFP064N technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 4nF |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 14ns |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFP064N Datasheet
Download the complete datasheet for International Rectifier AUIRFP064N to view detailed technical specifications.
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