N-Channel Power MOSFET, 40V Drain-Source Voltage, 195A Continuous Drain Current, and 1.7mΩ Rds On. Features a 380W maximum power dissipation and operates across a wide temperature range from -55°C to 175°C. This silicon, metal-oxide semiconductor FET utilizes a TO-247AC package for through-hole mounting. It includes a 2V threshold voltage, 8.92nF input capacitance, and turn-on/off delay times of 59ns and 160ns respectively. RoHS compliant.
International Rectifier AUIRFP4004 technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 195A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 8.92nF |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 380W |
| Radiation Hardening | No |
| Rds On Max | 1.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 59ns |
| Width | 5.31mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRFP4004 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.