N-channel power MOSFET, 100V drain-source voltage, 8.7A continuous drain current, and 0.19 ohm maximum drain-source on-resistance. Features a TO-252AA (DPAK) surface-mount package, 35W maximum power dissipation, and operates from -55°C to 175°C. Includes 8.3ns turn-on delay and 27ns turn-off delay. RoHS compliant silicon construction.
PackageDPAK
MountingSurface Mount
Power35W
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Technical Specifications
International Rectifier AUIRFR120Z technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 8.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 190MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 310pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 8.3ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFR120Z Datasheet
Download the complete datasheet for International Rectifier AUIRFR120Z to view detailed technical specifications.
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