The AUIRFR2905ZTR is a surface mount N-channel HEXFET MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 110W and a maximum drain to source breakdown voltage of 55V. The device is RoHS compliant and features a drain to source resistance of 14.5mR. It is available in a DPAK package with a package quantity of 2000 units per reel.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power11W
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Technical Specifications
International Rectifier AUIRFR2905ZTR technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 59A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 14.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.38nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 11W |
| Radiation Hardening | No |
| Rds On Max | 14.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFR2905ZTR Datasheet
Download the complete datasheet for International Rectifier AUIRFR2905ZTR to view detailed technical specifications.
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