International Rectifier
AUIRFR5505TRL
Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
PackageTO-252-3
MountingSurface Mount
Power57W
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Technical Specifications
International Rectifier AUIRFR5505TRL technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 55V |
| Element Configuration | Single |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 650pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 57W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFR5505TRL Datasheet
Download the complete datasheet for International Rectifier AUIRFR5505TRL to view detailed technical specifications.
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