N-Channel Power MOSFET, D2PAK package, featuring 75V drain-source breakdown voltage and 170A continuous drain current. Offers low on-resistance of 3.3mR at 10Vgs, with a maximum power dissipation of 300W. Operates across a wide temperature range from -55°C to 175°C, ideal for demanding surface-mount applications. Includes 6.92nF input capacitance and 55ns turn-off delay.
International Rectifier AUIRFS3207Z technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 75V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 6.92nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 4.1mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRFS3207Z to view detailed technical specifications.
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