N-Channel Power MOSFET, 60V Drain-Source Voltage, 210A Continuous Drain Current, and 2.4mΩ Drain-Source Resistance. This silicon, metal-oxide semiconductor FET features a TO-262 package for through-hole mounting, a maximum power dissipation of 300W, and operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include a 19ns turn-on delay and 55ns turn-off delay, with an 83ns fall time. RoHS compliant and designed for high-power applications.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
International Rectifier AUIRFSL3206 technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 210A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2.4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 83ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 6.54nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 19ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFSL3206 Datasheet
Download the complete datasheet for International Rectifier AUIRFSL3206 to view detailed technical specifications.
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