N-channel MOSFET, designed for high-power applications, features a 100V drain-to-source breakdown voltage and a continuous drain current of 130A. This through-hole component offers a low 7mΩ drain-to-source resistance and a maximum power dissipation of 300W. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching speeds with turn-on delay of 26ns and fall time of 78ns. Packaged in a TO-262 case, this RoHS compliant MOSFET is suitable for demanding electronic circuits.
International Rectifier AUIRFSL4310 technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 130A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 78ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 7.67nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 26ns |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRFSL4310 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.