International Rectifier
AUIRFU3607
Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3
PackageTO-251-3
MountingThrough Hole
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Technical Specifications
International Rectifier AUIRFU3607 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 56A |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 96ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.07nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFU3607 Datasheet
Download the complete datasheet for International Rectifier AUIRFU3607 to view detailed technical specifications.
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