N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source breakdown voltage and 49A continuous drain current. Offers low on-resistance of 17.5mΩ at a 10V gate-source voltage. Designed for surface mounting with a maximum power dissipation of 94W and operating temperature range of -55°C to 175°C. Includes 1.47nF input capacitance and fast switching times with 12ns turn-on and 44ns turn-off delays.
International Rectifier AUIRFZ44NS technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 49A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 17.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.47nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 94W |
| Radiation Hardening | No |
| Rds On Max | 17.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 12ns |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRFZ44NS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.