International Rectifier
AUIRFZ44Z
Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
Power80W
Quick Jump:
Technical Specifications
International Rectifier AUIRFZ44Z technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 51A |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 1.42nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Rds On Max | 13.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 14ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFZ44Z Datasheet
Download the complete datasheet for International Rectifier AUIRFZ44Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.