N-Channel Power MOSFET featuring 55V drain-source voltage and 61A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.011 ohm drain-source on-resistance and 91W maximum power dissipation. Designed for through-hole mounting in a TO-220AB plastic package, it operates within a temperature range of -55°C to 175°C and boasts fast switching speeds with turn-on and turn-off delay times of 15ns and 35ns respectively. RoHS compliant and lead-free.
PackageTO-220AB
MountingThrough Hole
Power91W
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Technical Specifications
International Rectifier AUIRFZ48Z technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 61A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8.6MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 1.72nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 91W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 91W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFZ48Z Datasheet
Download the complete datasheet for International Rectifier AUIRFZ48Z to view detailed technical specifications.
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