International Rectifier
AUIRL7732S2TR
Power Field-Effect Transistor, 14A I(D), 40V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
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Technical Specifications
International Rectifier AUIRL7732S2TR technical specifications.
General
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 2.02nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.2W |
| Radiation Hardening | No |
| Rds On Max | 6.6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRL7732S2TR Datasheet
Download the complete datasheet for International Rectifier AUIRL7732S2TR to view detailed technical specifications.
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