International Rectifier
AUIRL7736M2TR
Power Field-Effect Transistor, 22A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5
MountingSurface Mount
Power63W
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Technical Specifications
International Rectifier AUIRL7736M2TR technical specifications.
General
| Continuous Drain Current (ID) | 179A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 4.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 76ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 5.055nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Power Dissipation | 63W |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 48ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRL7736M2TR Datasheet
Download the complete datasheet for International Rectifier AUIRL7736M2TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.