International Rectifier
AUIRLL2705
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power1W
Quick Jump:
Technical Specifications
International Rectifier AUIRLL2705 technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 40MR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 870pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 80 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 6.2ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRLL2705 Datasheet
Download the complete datasheet for International Rectifier AUIRLL2705 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.