
N-Channel Power MOSFET, DPAK package, featuring 55V drain-source breakdown voltage and 42A continuous drain current. Offers low on-resistance of 27mΩ at a 10V gate-source voltage. Designed for surface mounting with a maximum power dissipation of 110W and operating temperature range of -55°C to 175°C. Includes 11ns turn-on and 26ns turn-off delay times.
International Rectifier AUIRLR2905 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.39mm |
| Input Capacitance | 1.7nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 27mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRLR2905 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
