International Rectifier
AUIRLR2905ZTR
Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
International Rectifier AUIRLR2905ZTR technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 22.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.57nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 13.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRLR2905ZTR Datasheet
Download the complete datasheet for International Rectifier AUIRLR2905ZTR to view detailed technical specifications.
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