International Rectifier
AUIRLU2905
Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, IPAK-3
PackageTO-251-3
MountingThrough Hole, Surface Mount
Power110W
Quick Jump:
Technical Specifications
International Rectifier AUIRLU2905 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.39mm |
| Input Capacitance | 1.7nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole, Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| Width | 7.49mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRLU2905 Datasheet
Download the complete datasheet for International Rectifier AUIRLU2905 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
