International Rectifier
IRF1010EPBF
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
Current Rating84A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1010EPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
84A
Current Rating
84A
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
12MR
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
3.21nF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
48ns
Turn-On Delay Time
12ns
DC Rated Voltage
60V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1010EPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010EPBF to view detailed technical specifications.
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