International Rectifier
IRF1010EPBF
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
Current Rating84A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1010EPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 84A |
| Current Rating | 84A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 12MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 3.21nF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 60V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1010EPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010EPBF to view detailed technical specifications.
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