International Rectifier
IRF1010ES
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
PackageTO-263
Resistance0.012R
Current Rating84A
Power170W
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Technical Specifications
International Rectifier IRF1010ES technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
84A
Current Rating
84A
Drain to Source Breakdown Voltage
60V
Drain to Source Voltage (Vdss)
60V
Lead Free
Contains Lead
Max Operating Temperature
175°C
Max Power Dissipation
170W
Nominal Vgs
4V
Packaging
Bulk
Power Dissipation
170W
Reach SVHC Compliant
Unknown
Resistance
0.012R
RoHS Compliant
No
DC Rated Voltage
60V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF1010ES Datasheet
Download the complete datasheet for International Rectifier IRF1010ES to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.