N-Channel Power MOSFET, 60V Drain-Source Voltage, 84A Continuous Drain Current, 12mΩ Drain-Source Resistance. Features 175°C maximum operating temperature, 170W power dissipation, and 3.21nF input capacitance. Surface mountable in a D2PAK package, this silicon Metal-oxide Semiconductor FET offers fast switching with 12ns turn-on delay and 48ns turn-off delay. RoHS compliant and lead-free.
PackageD2PAK
Current Rating83A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF1010ESPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 84A |
| Current Rating | 83A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 53ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.21nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 60V |
| Weight | 0.139332oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1010ESPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010ESPBF to view detailed technical specifications.
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