N-Channel Power MOSFET, 60V Drain-Source Voltage, 84A Continuous Drain Current, 12mΩ Drain-Source Resistance. Features 175°C maximum operating temperature, 170W power dissipation, and 3.21nF input capacitance. Surface mountable in a D2PAK package, this silicon Metal-oxide Semiconductor FET offers fast switching with 12ns turn-on delay and 48ns turn-off delay. RoHS compliant and lead-free.
PackageD2PAK
Current Rating83A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF1010ESPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
84A
Current Rating
83A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
12mR
Drain to Source Voltage (Vdss)
60V
Fall Time
53ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
3.21nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
170W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
48ns
Turn-On Delay Time
12ns
DC Rated Voltage
60V
Weight
0.139332oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1010ESPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010ESPBF to view detailed technical specifications.
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