International Rectifier
IRF1010ESTRL
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
PackageTO-263
Resistance0.012R
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Technical Specifications
International Rectifier IRF1010ESTRL technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
84A
Drain to Source Voltage (Vdss)
60V
Max Operating Temperature
175°C
Max Power Dissipation
200W
Nominal Vgs
4V
Reach SVHC Compliant
Unknown
Resistance
0.012R
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF1010ESTRL Datasheet
Download the complete datasheet for International Rectifier IRF1010ESTRL to view detailed technical specifications.
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