International Rectifier
IRF1010ESTRL
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
PackageTO-263
Resistance0.012R
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Technical Specifications
International Rectifier IRF1010ESTRL technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Voltage (Vdss) | 60V |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 200W |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | Unknown |
| Resistance | 0.012R |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF1010ESTRL Datasheet
Download the complete datasheet for International Rectifier IRF1010ESTRL to view detailed technical specifications.
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