International Rectifier
IRF1010EZ
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1010EZ technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
75A
Drain to Source Voltage (Vdss)
60V
Input Capacitance
2.81nF
Max Power Dissipation
140W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Rds On Max
8.5mR
RoHS Compliant
No
Series
HEXFET®
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF1010EZ Datasheet
Download the complete datasheet for International Rectifier IRF1010EZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.