International Rectifier
IRF1010N
Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
Current Rating85A
MountingThrough Hole
Power180W
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Technical Specifications
International Rectifier IRF1010N technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
85A
Current Rating
85A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
11mR
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Through Hole
Number of Elements
1
Packaging
Bulk
Power Dissipation
180W
Radiation Hardening
No
RoHS Compliant
No
DC Rated Voltage
55V
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF1010N Datasheet
Download the complete datasheet for International Rectifier IRF1010N to view detailed technical specifications.
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