International Rectifier
IRF1010N
Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
Current Rating85A
MountingThrough Hole
Power180W
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Technical Specifications
International Rectifier IRF1010N technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 85A |
| Current Rating | 85A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 11mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 180W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF1010N Datasheet
Download the complete datasheet for International Rectifier IRF1010N to view detailed technical specifications.
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