IRF1010NS

Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

PackageTO-263-3

MountingSurface Mount

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International Rectifier IRF1010NS technical specifications.

Package/Case

TO-263-3

Continuous Drain Current (ID)

85A

Drain to Source Voltage (Vdss)

55V

Input Capacitance

3.21nF

Max Power Dissipation

180W

Mount

Surface Mount

Package Quantity

Packaging

Rail/Tube

Rds On Max

11mR

RoHS Compliant

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.