International Rectifier
IRF1010NSTRL
Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRF1010NSTRL technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 3.21nF |
| Max Power Dissipation | 180W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| RoHS Compliant | No |
| Series | HEXFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF1010NSTRL Datasheet
Download the complete datasheet for International Rectifier IRF1010NSTRL to view detailed technical specifications.
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