IRF1010NSTRL

Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

PackageTO-263-3

MountingSurface Mount

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International Rectifier IRF1010NSTRL technical specifications.

Package/Case

TO-263-3

Continuous Drain Current (ID)

85A

Drain to Source Voltage (Vdss)

55V

Input Capacitance

3.21nF

Max Power Dissipation

180W

Mount

Surface Mount

Package Quantity

800

Packaging

Tape and Reel

Rds On Max

11mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.