International Rectifier
IRF1010ZL
Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating75A
MountingThrough Hole
Power140W
Quick Jump:
Technical Specifications
International Rectifier IRF1010ZL technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
75A
Current Rating
75A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Input Capacitance
2.84nF
Lead Free
Contains Lead
Max Power Dissipation
140W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
140W
Rds On Max
7.5mR
RoHS Compliant
No
Series
HEXFET®
DC Rated Voltage
55V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF1010ZL Datasheet
Download the complete datasheet for International Rectifier IRF1010ZL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.