N-Channel Power MOSFET, TO-220AB package, featuring 55V drain-source voltage and 75A continuous drain current. Boasts a low 0.0075 ohm drain-source on-resistance at a nominal 4V gate-source voltage. Designed for through-hole mounting, this silicon FET offers a maximum power dissipation of 140W and operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 18ns and turn-off delay time of 36ns.
PackageTO-220AB
Current Rating75A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1010ZPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
94A
Current Rating
75A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
7.5MR
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
2.84nF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Nominal Vgs
4V
On-State Resistance
7.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
36ns
Turn-On Delay Time
18ns
DC Rated Voltage
55V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1010ZPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010ZPBF to view detailed technical specifications.
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