N-Channel Power MOSFET, TO-220AB package, featuring 55V drain-source voltage and 75A continuous drain current. Boasts a low 0.0075 ohm drain-source on-resistance at a nominal 4V gate-source voltage. Designed for through-hole mounting, this silicon FET offers a maximum power dissipation of 140W and operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 18ns and turn-off delay time of 36ns.
PackageTO-220AB
Current Rating75A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1010ZPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 94A |
| Current Rating | 75A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 7.5MR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 2.84nF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| On-State Resistance | 7.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 55V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1010ZPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010ZPBF to view detailed technical specifications.
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